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| automotive grade descriptionspecifically designed for automotive applications, this hexfet ? power mosfet utilizes the latest processing techniques to achieve extremely lowon-resistance per silicon area. additional features of this design are a 175c junction operating temperature, fast switching speed and improved repetitive avalanche rating . these features com- bine to make this design an extremely efficient and reliable device for use in automotive applica- tions and a wide variety of other applications. hexfet ? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/ features advanced process technology low on-resistance 175c operating temperature fast switching repetitive avalanche allowed up to tjmax lead-free, rohs compliant automotive qualified * absolute maximum ratingsstresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (t a ) is 25c, unless otherwise specified. hexfet ? power mosfet s d g g d s gate drain source v (br)dss 300v r ds(on) typ. 148m ? max. 185m ? i d 19a parameter units i d @ t c = 25c continuous drain current, v gs @ 10v i d @ t c = 100c continuous drain current, vgs @ 10v a i dm pulsed drain current p d @t c = 25c power dissipation w linear derating factor w/c v gs gate-to-source voltage v e as single pulse avalanche energy (thermally limited) mj e as (tested ) single pulse avalanche energy tested value i ar avalanche current a e ar repetitive avalanche energy mj t j operating junction and t stg storage temperature range c soldering temperature, for 10 seconds (1.6mm from case ) thermal resistance parameter typ. max. units r ? jc junction-to-case CCC 0.71 c/w r ? ja junction-to-ambient (pcb mount) CCC 40 max. 1913 100310 216 see fig.12a, 12b, 15, 16 -55 to + 175 300 210 1.4 20 to-262 auirfsl6535 s d g d d 2 pak AUIRFS6535 s d g d base part number package type standard pack orderable part number form quantity auirfsl6535 to-262 tube 50 auirfsl6535 AUIRFS6535 d2pak tube 50 AUIRFS6535 tape and reel left 800 AUIRFS6535trl tape and reel right 800 AUIRFS6535trr downloaded from: http:/// repetitive rating; pulse width limited bymax. junction temperature. (see fig. 11). limited by t jmax , starting t j = 25c, l = 3.6mh r g = 50 ? , i as = 11a, v gs =10v. part not recommended for use above this value. pulse width ? 1.0ms; duty cycle ? 2%. c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . limited by t jmax , see fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. starting t j = 25c, l = 3.6mh, r g = 50 ? , i as = 11a, v gs =10v. this is applied to d 2 pak, when mounted on 1" square pcb (fr- 4 or g-10 material). for recommended footprint and solderingtechniques refer to application note #an-994. ? s d g s d g static electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage 300 CCC CCC v ? v (br)dss / ? t j breakdown voltage temp. coefficient CCC 0.39 CCC v/c r ds(on) static drain-to-source on-resistance CCC 148 185 m ? v gs (t h ) gate threshold voltage 3.0 CCC 5.0 v gfs forward transconductance 15 CCC CCC v i ds s drain-to-source leakage current CCC CCC 20 a CCC CCC 250 i gs s gate-to-source forward leakage CCC CCC 100 na gate-to-source reverse leakage CCC CCC -100 dynamic electrical @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge CCC 38 57 q gs gate-to-source charge C C C1 2C C C nc q gd gate-to-drain ("miller") charge C C C1 3C C C t d(on) turn-on delay time C C C1 5C C C t r rise time C C C1 6C C C t d(off) turn-off delay time C C C2 2C C C ns t f fall time C C C1 0C C C l d internal drain inductance CCC 4.5 CCC between lead, nh 6mm (0.25in.) l s internal source inductance CCC 7.5 CCC from package and center of die contact c iss input capacitance CCC 2340 CCC c os s output capacitance CCC 195 CCC c rs s reverse transfer capacitance C C C4 0C C C pf c os s output capacitance CCC 1750 CCC c os s output capacitance C C C6 6C C C c os s eff. effective output capacitance CCC 130 CCC diode characteristics parameter min. typ. max. units i s continuous source current CCC CCC 19 (body diode) a i sm pulsed source current CCC CCC 100 (body diode) v sd diode forward voltage CCC CCC 1.3 v t rr reverse recovery time CCC 190 285 ns q rr reverse recovery charge CCC 990 1485 nc t on forward turn-on time intrins ic turn-on time is negligible (turn-on is dominated by ls+l d) v ds = 50v, i d = 11a i d = 11a v ds = 150v conditions v gs = 10v v gs = 0v v ds = 25v ? = 1.0mhz v gs = 20v v gs = -20v mosfet symbol showing the integral reverse p-n junction diode. t j = 25c, i s = 11a, v gs = 0v t j = 25c, i f = 11a, v dd = 150v di/dt = 100a/ s conditions v gs = 0v, i d = 250 a reference to 25c, i d = 5.0ma v gs = 10v, i d = 11a v ds = v gs , i d = 150 a v ds = 300v, v gs = 0v v ds = 300v, v gs = 0v, t j = 125c conditions v gs = 0v, v ds = 1.0v, ? = 1.0mhz v gs = 0v, v ds = 240v, ? = 1.0mhz v gs = 0v, v ds = 0v to 240v v gs = 10v v dd = 300v i d = 11a r g = 5.0 ? downloaded from: http:/// fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. typical forward transconductance vs. drain current 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 8.0v 7.0v 6.5v 6.0v 5.5v bottom 5.0v ? 60 s pulse width tj = 25c 5.0v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 5.0v ? 60 s pulse width tj = 175c vgs top 15v 10v 8.0v 7.0v 6.5v 6.0v 5.5v bottom 5.0v 3 4 5 6 7 8 9 v gs , gate-to-source voltage (v) 1.0 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 175c v ds = 50v ? 60 s pulse width 0123456 i d ,drain-to-source current (a) 0 5 10 15 20 g f s , f o r w a r d t r a n s c o n d u c t a n c e ( s ) t j = 25c t j = 175c v ds = 5.0v 380 s pulse width downloaded from: http:/// fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 1000 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 5 10 15 20 25 30 35 40 45 50 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 240v v ds = 150v v ds = 60v i d = 11a 0.2 0.4 0.6 0.8 1.0 1.2 v sd , source-to-drain voltage (v) 1.0 10 100 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v 1 10 100 1000 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100 sec dc downloaded from: http:/// fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature fig 10. normalized on-resistance vs. temperature 25 50 75 100 125 150 175 t c , case temperature (c) 0 5 10 15 20 i d , d r a i n c u r r e n t ( a ) -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 19a v gs = 10v 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc downloaded from: http:/// q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 ? f 50k ? .2 ? f 12v current regulator same type as d.u.t. current sampling resistors + - fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as fig 14. threshold voltage vs. temperature r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 100 200 300 400 500 600 700 800 900 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 1.5a 3.0a bottom 11a -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 150 a i d = 250 a i d = 1.0ma i d = 1.0a downloaded from: http:/// fig 15. typical avalanche current vs.pulsewidth fig 16. maximum avalanche energy vs. temperature notes on repetitive avalanche curves , figures 15, 16:(for further info, see an-1005 at www.irf.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type.2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 12a, 12b. 4. p d (ave) = average power dissipation per single avalanche pulse.5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 15, 16). t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figure 11) p d (ave) = 1/2 ( 1.3bvi av ) = t/ z thjc i av = 2 t/ [1.3bvz th ] e as (ar) = p d (ave) t av 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 a v a l a n c h e c u r r e n t ( a ) 0.05 duty cycle = single pulse 0.10 allowed avalanche current vs avalanche pulsewidth, tav, assuming ?? j = 25c and tstart = 150c. 0.01 allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 150c and tstart =25c (single pulse) 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 50 100 150 200 250 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1.0% duty cycle i d = 11a downloaded from: http:/// fig 17. !" #$ % $%&$ '( ) for n-channel hexfet power mosfets ????? ???? ???? p.w. period di/dt diode recovery dv/dt ripple ? 5% body diode forward drop re-appliedvoltage reverserecovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period * !" # " * + - + + + - - - ??? ! ??? " #$## ??? % & & ??? #$##' $ v ds 90%10% v gs t d(on) t r t d(off) t f ( ) ???? * % ??????? # $ % + - fig 18a. switching time test circuit fig 18b. switching time waveforms downloaded from: http:/// + note: for the most current drawing please refer to ir website at http://www.irf.com/package/ !" # # $$ $$ # )$ ,- , ..- ." ." /- / % 0$1 ! 2 3 04 0 )$ downloaded from: http:/// to-262 part marking information to-262 package outlinedimensions are shown in millimeters (inches) note: for the most current drawing please refer to ir website at http://www.irf.com/package/pkhexfet.html 0 )$ $$ $$ ! 2 3 04 %"% # # # )$ ,- , ..- ." ." /- / % 0$ 1 downloaded from: http:/// & ' dimensions are shown in millimeters (inches) 3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge. note: for the most current drawing please refer to ir website at http://www.irf.com/package/pkhexfet.html downloaded from: http:/// qualification information ? to-262 n/a d 2 pak msl1 rohs compliant yes esd machine model class m2 (+/- 200v) ?? aec-q101-002 human body model class h1b (+/- 1000v) ?? aec-q101-001 qualification level automotive (per aec-q101) comments: this part number(s) passed automotive qualification. irs industrial and consumer qualification level is granted by extension of the higher automotive level. charged device model class c5 (+/- 2000v) ?? aec-q101-005 moisture sensitivity level 5 6 ($$( 3 $ 7( 3 (8 9:&& & 55 ;49( :((4 %4 downloaded from: http:/// ! " #$% & ' ( ! $ ) * ! * ! + ( ( & ! ,& ( ! ! ! + - ( ! ! . ! ! ) ! & ! ! - ) ! / 0 - 0 . & ) - ! 1 2 $ 2$ / 2$ ( ! 0 2$ . ( 0 * ( ! /1'+/ 34565 ( #$%! 0 . ( ! 1 9 (:: :( 7( '9 /((( ) 9:8&& &9<& %%& ' ( ) ' ! *+ ,-.%/* *01% downloaded from: http:/// |
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